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ptfa192401e PTFA192401F confidential, limited internal distribution data sheet 1 of 11 rev. 02, 2009-04-01 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! description the ptfa192401e and PTFA192401F are 240-watt ldmos fets intended for single- and two-carrier wcdma and cdma applications from 1930 to 1990 mhz. features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptfa192401e package h-36260-2 thermally-enhanced high power rf ldmos fets 240 w, 1930 ? 1990 mhz single-carrier wcdma drive-up v dd = 30 v, i dq = 1600 ma, ? = 1960 mhz, 3gpp wcdma signal, tm1 w/16 dpch, 67% clipping, par = 8.5 db, 3.84 mhz bw -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 34 36 38 40 42 44 46 48 50 average output power (dbm) 0 5 10 15 20 25 30 35 drain efficiency (%) adjacent channel power ratio (db) efficiency acpr low acpr up PTFA192401F package h-37260-2 features ? pb-free, rohs-compliant and thermally-enhanced packages ? broadband internal matching ? typical two-carrier wcdma performance at 1960?mhz, 30 v - average output power = 47.0 dbm - linear gain = 16 db - efficiency = 27.5% - intermodulation distortion = ?35 dbc - adjacent channel power = ?41 dbc ? typical single-carrier wcdma performance at 1960 mhz, 30 v, 3gpp signal, par = 8.5 db - average output power = 49 dbm - linear gain = 16 db - efficiency = 33% - adjacent channel power = ?33 dbc ? typical cw performance, 1960 mhz, 30 v - output power at p?1db = 240 w - efficiency = 54% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 5:1 vswr @ 30 v, 240 w (cw) output power *see infineon distributor for future availability.
data sheet 2 of 11 rev. 02, 2009-04-01 ptfa192401e PTFA192401F confidential, limited internal distribution rf characteristics wcdma measurements (tested in infineon test fixture ) v dd = 30 v, i dq = 1.6 a, p out = 50 w average ? 1 = 1955 mhz, ? 2 = 1965 mhz, 3gpp signal, channel bandwidth = 3.84 mhz , peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 15 16 ? db drain efficiency h d 25 27 ? % intermodulation distortion imd ? ?36 ?34 dbc two-tone measurements ( not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 30 v, i dq = 1.6 a, p out = 220 w pep, ? = 1960 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps ? 15.8 ? db drain efficiency h d ? 40 ? % intermodulation distortion imd ? ?28 ? dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a drain leakage current v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.03 ? w operating gate voltage v ds = 30 v, i dq = 1.6 a v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 761 w above 25c derate by 4.35 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 50 w wcdma) r q jc 0.23 c/w
data sheet 3 of 11 rev. 02, 2009-04-01 ptfa192401e PTFA192401F confidential, limited internal distribution intermodulation distortion products v. output power v dd = 30 v, i dq = 1600 ma, ? 1 = 1957.5 mhz, ? 2 = 1962.5 mhz -60 -50 -40 -30 -20 10 100 1000 output power, pep (w) im5 im7 intermodulation distortion (dbc) im3 up low broadband performance v dd = 30 v, i dq = 1600 ma, p out = 50 w 10 15 20 25 30 35 40 1860 1890 1920 1950 1980 2010 2040 frequency (mhz) gain (db), efficiency (%) -35 -30 -25 -20 -15 -10 -5 input return loss (db) gain efficiency input return loss ordering information type and version package type package description marking ptfa192401e v4 h-36260-2 thermally-enhanced slotted flange, single-ended ptfa192401e PTFA192401F v4 h-37260-2 thermally-enhanced earless flange, single-ended PTFA192401F typical performance (data taken in a production test fixture) *see infineon distributor for future availability.
data sheet 4 of 11 rev. 02, 2009-04-01 ptfa192401e PTFA192401F confidential, limited internal distribution two-carrier wcdma at selected biases v dd = 30 v, ? = 1960 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, series show i dq -55 -50 -45 -40 -35 -30 34 36 38 40 42 44 46 output power, pep (dbm) 3rd order imd (dbc) 1.6 a 1.4 a 2.0 a 1.8 a 2.2 a typical performance (cont.) two-carrier wcdma drive-up v dd = 30 v, i dq = 1600 ma, ? = 1960 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing -60 -55 -50 -45 -40 -35 -30 -25 34 36 38 40 42 44 46 48 output power, avg. (dbm) im3 (dbc), acpr (dbc) 0 5 10 15 20 25 30 drain efficiency (%) acpr im3 efficiency power sweep, cw conditions v dd = 30 v, i dq = 1600 ma, ? = 1990 mhz 12 13 14 15 16 17 0 40 80 120 160 200 240 output power (w) gain (db) 15 25 35 45 55 65 drain efficiency (%) efficiency t case = 25c t case = 90c gain intermodulation distortion products vs. tone spacing v dd = 30 v i dq = 1800 ma , ? = 1960 mhz, p out = 53 dbm pep -55 -50 -45 -40 -35 -30 -25 -20 0 5 10 15 20 25 30 35 40 tone spacing (mhz) intermodulation distortion (dbc) 3rd order 5th 7th
data sheet 5 of 11 rev. 02, 2009-04-01 ptfa192401e PTFA192401F confidential, limited internal distribution typical performance (cont.) power gain vs. power sweep (cw) over temperature v dd = 30 v, i dq = 1500 ma, ? = 1990 mhz 12 13 14 15 16 17 18 1 10 100 1000 output power (w) power gain (db) -15c 25c 85c two-tone drive-up v dd = 30 v, i dq = 1600 ma, ? = 1960 mhz, tone spacing = 1 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 42 44 46 48 50 52 54 56 output power, pep (dbm) 10 15 20 25 30 35 40 45 drain efficiency (%) im5 efficiency im7 intermodulation distortion (dbc) im3 output peak-to-average ratio compression (parc) at various power levels v dd = 30 v, i dq = 1600 ma, ? = 1990 mhz, single-carrier wcdma input par = 7.5 db 0.001 0.01 0.1 1 10 100 1 2 3 4 5 6 7 8 peak-to-average (db) probability (%) 52 dbm 51.0 dbm 50 dbm 48 dbm 46 dbm input voltage sweep i dq = 1600 ma, ? = 1960 mhz, tone spacing = 1 mhz, output power (pep) = 53 dbm -50 -40 -30 -20 -10 23 25 27 29 31 33 supply voltage (v) 3rd order intermodulation distortion (dbc) 10 20 30 40 50 gain efficiency im3 up gain (db), drain efficiency (%)
data sheet 6 of 11 rev. 02, 2009-04-01 ptfa192401e PTFA192401F confidential, limited internal distribution z source z load g s d frequency z source w z load w mhz r jx r jx 1900 8.43 ?8.22 0.80 3.26 1930 8.00 ?7.86 0.78 3.56 1960 7.57 ?7.51 0.76 3.84 1990 7.19 ?7.17 0.73 4.12 2020 6.86 ?6.77 0.72 4.3 8 broadband circuit impedance 0 . 1 0 . 3 0 . 2 0 . 1 0 . 2 0 . 1 0 . 2 d g e n e r a t o r - - - > < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 z load z source 1900 mhz 2020 mhz 1900 mhz 2020 mhz z 0 = 50 w bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.44 a 1.32 a 2.20 a 3.30 a 6.61 a 9.91 a 13.22 a 16.52 a typical performance (cont.)
data sheet 7 of 11 rev. 02, 2009-04-01 ptfa192401e PTFA192401F confidential, limited internal distribution reference circuit reference circuit schematic for ? = 1960 mhz circuit assembly information dut ptfa192401e or PTFA192401F ldmos transistor pcb 0.76 mm [.030"] thic k, rf35 , e r = 3.48 rogers ro4350 1 oz. copper microstrip electrical characteristics at 1960 mhz dimensions: l x w ( mm) dimensions: l x w (in.) l 1 0.038 l, 50.0 w 3.51 x 1.70 0.138 x 0.067 l 2 0.071 l , 50.0 w 6.60 x 1.70 0.260 x 0.067 l 3 0.022 l , 43.1 w 2.01 x 2.16 0.079 x 0.085 l 4 0.060 l , 43.1 w / 6.9 w 5.28 x 2.16 / 20.32 0.208 x 0.085 / 0.800 l 5 0.040 l , 6.9 w 3.33 x 20.32 0.131 x 0.800 l 6 0.026 l , 6.9 w 2.21 x 20.32 0.087 x 0.800 l 7, l8 0.123 l , 59.9 w 11.48 x 1.24 0.452 x 0.049 l 9 0.010 l , 5.0 w 0.84 x 28.91 0.033 x 1.138 l 10, l12 0.027 l , 51.0 w 2.54 x 1.65 0.100 x 0.065 l 11, l13 0.228 l , 51.0 w 21.03 x 1.65 0.828 x 0.065 l 14, l15 0.028 l , 5.0 w 2.36 x 28.91 0.093 x 1.138 l 16 0.011 l , 5.0 w / 6.0 w 0.89 x 28.91 / 23.65 0.035 x 1.138 / 0.931 l 17 0.030 l , 6.0 w / 12.3 w 2.54 x 23.65 / 10.67 0.100 x 0.931/ 0.420 l 18 0.019 l , 12.3 w / 41.2 w 1.78 x 10.67 / 2.29 0.070 x 0.420 / 0.090 l 19 0.033 l , 41.2 w 3.05 x 2.29 0.120 x 0.090 l 20 0.096 l , 50.0 w 8.99 x 1.70 0.354 x 0.067 c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f v dd r1 1.2k v r3 2k v r5 2k v r8 2k v c7 10pf l 7 j2 c4 4.7f 16v c5 0.1f r6 5.1k v c6 10pf c33 10pf c18 10pf c20 1f c19 1f c23 10f 50v c21 2.2f c22 0.1f c16 10f 50v l 2 l 3 l 4 l 6 l 5 l 8 c8 4.7f 16v c9 0.1f c10 10pf r7 5.1k v l 20 c17 100f 50v c24 100f 50v l 1 j1 v dd dut l 19 c32 0.6pf c27 0.5pf c26 0.3pf l 9 l 13 l 12 l 14 l 15 c29 0.7pf l 16 l 17 l2 l 18 c31 0.7pf l 10 l 11 c12 1f c11 10pf c25 0.3pf c14 2.2f c28 0.7pf c13 1f c15 0.1f c30 0.7pf l1
data sheet 8 of 11 rev. 02, 2009-04-01 ptfa192401e PTFA192401F confidential, limited internal distribution vdd gnd v66100-g9258-d301-01-7631.dwg reference circuit (cont.) reference circuit assembly diagram* (not to scale) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4, c8 capacitor, 4.7 f, 16v digi-key pcs3475ct-nd c5, c9, c15, c22 capacitor, 0.1 f digi-key pcc104bct-nd c6, c10 ceramic capacitor, 10 pf atc 100a 100 c7, c33 ceramic capacitor, 10 pf atc 100b 100 c11, c18 capacitor, 10 pf avx 08051j100gbttr c12, c13, c19, c20 ceramic capacitor, 1 f digi-key 445-1411-1-nd c14, c21 capacitor, 2.2 f digi-key 445-1447-2-nd c16, c23 tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c17, c24 electrolytic capacitor, 100 f, 50 v digi-key p5571-nd c25, c26 capacitor, 0.3 pf avx 08051j0r3bbttr c27 capacitor, 0.5 pf avx 08051j0r5bbttr c28, c29, c30, c31 capacitor, 0.7 pf avx 08051j0r7bbttr c32 capacitor, 0.6 pf atc 600s0r6bt l1, l2 ferrite, 8.9mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2k ohms digi-key p1.2kgct-nd r2 chip resistor 1.3k ohms digi-key p1.3kgct-nd r3, r5 chip resistor 2k ohms digi-key p2kect-nd r4 chip resistor 10 ohms digi-key p10ect-nd r6, r7 chip resistor 5.1k ohms digi-key p5.1kect-nd r8 potentiometer 2k ohms digi-key 3224w-202etr-nd *gerber files for this circuit available on request
data sheet 9 of 11 rev. 02, 2009-04-01 ptfa192401e PTFA192401F confidential, limited internal distribution package outline specifications package h-36260-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. pins: d = drain, s = source, g = gate. 3. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 4. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] 5. all tolerances 0.127 [.005] unless specified otherwise. 6. primary dimensions are mm. alternate dimensions are inches. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower c66065-a2324-c001-01-0027
data sheet 10 of 11 rev. 02, 2009-04-01 ptfa192401e PTFA192401F confidential, limited internal distribution package outline specifications (cont.) package h-37260-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. pins: d = drain, s = source, g = gate. 3. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 4. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] 5. all tolerances 0.127 [.005] unless specified otherwise. 6. primary dimensions are mm. alternate dimensions are inches. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower c66065-a2325-c001-01-0027
data sheet 11 of 11 rev. 02, 2009-04-01 ptfa192401e/f confidential, limited internal distribution revision history: 2009-04-01 data sheet previous version: 2008-10-06 page subjects (major changes since last revision) 9, 10 update package information goldmos ? is a registered trademark of infineon technologies ag. edition 2009-04-01 published by infineon technologies ag 81726 munich , germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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